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| FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES * * * * High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: add = 32%(Typ.) Proven Reliability Source Gate Drain DESCRIPTION The FLK027XP, and FLK027XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. Source ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Rating 15 -5 Tc = 25C 1.88 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 2.2 and -0.1 mA respectively with gate resistance of 2000. 3. The operating channel temperature (Tch) should not exceed 145C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Power-added Efficiency Thermal Resistance Symbol IDSS gm Vp VGSO P1dB G1dB add Rth Channel to Case VDS = 10V IDS 0.6IDSS f = 14.5GHz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 65mA VDS = 5V, IDS = 5mA IGS = -5A Min. -1.0 -5 23 Limit Typ. Max. 100 50 -2.0 24 150 -3.5 Unit mA mS V V dBm 6 - 7 32 40 80 dB % C/W Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. Edition 1.3 July 1999 1 FLK027XP, FLK027XV GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Total Power Dissipation (W) Drain Current (mA) 2 100 75 50 25 VGS =0V -0.5V -1.0V -1.5V -2.0V 1 0 50 100 150 200 2 4 6 8 10 Case Temperature (C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER P1dB & add vs. VDS Output Power (dBm) VDS=10V 24 IDS0.6IDSS f = 14.5GHz 25 P1dB (dBm) Pout f = 14.5GHz IDS0.6IDSS 22 20 24 23 P1dB add (%) add 18 16 7 9 add 40 20 22 21 30 20 11 13 15 17 19 8 9 10 Input Power (dBm) Drain-Source Voltage (V) 2 add (%) 40 FLK027XP, FLK027XV GaAs FET & HEMT Chips S-PARAMETERS VDS = 10V, IDS = 60mA FLK027XP FREQUENCY S11 (MHZ) MAG ANG 100 1.000 -3.3 500 .996 -16.4 1000 .984 -32.4 1500 .967 -47.6 2000 .947 -61.7 2500 .926 -74.7 3000 .907 -86.5 3500 .890 -97.2 4000 .874 -107.0 4500 .861 -115.8 5000 .850 -123.9 5500 .841 -131.3 6000 .834 -138.0 6500 .828 -144.3 7000 .823 -150.1 7500 .820 -155.5 8000 .817 -160.6 8500 .815 -165.4 9000 .813 -169.8 9500 .812 -174.1 10000 .812 -178.1 10500 .812 178.1 11000 .812 174.4 11500 .813 171.0 12000 .814 167.6 12500 .815 164.4 13000 .816 161.3 13500 .818 158.4 14000 .819 155.5 14500 .821 152.8 15000 .823 150.1 15500 .825 147.6 16000 .827 145.1 16500 .829 142.7 17000 .831 140.4 17500 .834 138.1 18000 .836 135.9 18500 .838 133.8 19000 .841 131.7 19500 .843 129.7 20000 .846 127.8 n: number of wires FLK027XV S22 MAG ANG .735 -1.1 .732 -5.4 .721 -10.6 .705 -15.4 .687 -19.8 .668 -23.7 .649 -27.3 .633 -30.6 .618 -33.7 .605 -36.6 .594 -39.4 .585 -42.1 .578 -44.8 .571 -47.5 .566 -50.2 .562 -52.9 .559 -55.7 .556 -58.4 .555 -61.2 .553 -64.1 .553 -66.9 .553 -69.9 .553 -72.8 .554 -75.8 .555 -78.8 .557 -81.9 .559 -85.0 .562 -88.1 .565 -91.3 .568 -94.4 .571 -97.6 .575 -100.8 .580 -104.1 .584 -107.3 .589 -110.6 .594 -113.9 .600 -117.1 .606 -120.4 .612 -123.7 .618 -127.0 .625 -130.2 FREQUENCY (MHZ) MAG 100 1.000 500 .996 1000 .984 1500 .968 2000 .948 2500 .928 3000 .909 3500 .892 4000 .877 4500 .864 5000 .854 5500 .845 6000 .837 6500 .831 7000 .827 7500 .823 8000 .820 8500 .818 9000 .816 9500 .815 10000 .814 10500 .814 11000 .814 11500 .814 12000 .815 12500 .816 13000 .817 13500 .818 14000 .820 14500 .821 15000 .823 15500 .825 16000 .827 16500 .829 17000 .831 17500 .833 18000 .835 18500 .837 19000 .839 19500 .842 20000 .844 S11 ANG -3.3 -16.4 -32.4 -47.6 -61.7 -74.7 -86.5 -97.2 -107.0 -115.8 -123.9 -131.2 -138.0 -144.3 -150.1 -155.5 -160.5 -165.3 -169.7 -174.0 -178.0 178.2 174.6 171.1 167.8 164.6 161.5 158.6 155.8 153.0 150.4 147.8 145.4 143.0 140.7 138.4 136.2 134.1 132.1 130.1 128.1 MAG 4.479 4.436 4.310 4.122 3.896 3.653 3.410 3.177 2.959 2.759 2.576 2.411 2.262 2.127 2.005 1.894 1.793 1.701 1.617 1.539 1.468 1.402 1.341 1.284 1.231 1.181 1.135 1.091 1.049 1.010 .973 .937 .904 .872 .841 .811 .783 .756 .729 .704 .680 S21 ANG 177.6 168.1 156.5 145.4 135.0 125.4 116.5 108.3 100.6 93.5 86.8 80.4 74.4 68.7 63.1 57.8 52.7 47.7 42.8 38.0 33.4 28.8 24.3 19.9 15.6 11.3 7.1 3.0 -1.1 -5.2 -9.2 -13.2 -17.1 -21.0 -24.9 -28.7 -32.5 -36.2 -39.9 -43.6 -47.3 Gate Drain S21 MAG ANG 4.479 177.6 4.436 168.1 4.309 156.4 4.121 145.3 3.894 135.0 3.651 125.3 3.407 116.4 3.174 108.2 2.956 100.5 2.756 93.4 2.573 86.7 2.409 80.4 2.259 74.4 2.125 68.6 2.003 63.1 1.892 57.8 1.792 52.6 1.700 47.6 1.616 42.8 1.538 38.0 1.467 33.4 1.401 28.8 1.340 24.3 1.283 19.9 1.230 15.6 1.181 11.3 1.134 7.1 1.090 3.0 1.048 -1.1 1.009 -5.2 0.971 -9.2 0.936 -13.1 0.902 -17.1 0.869 -21.0 0.838 -24.8 0.808 -28.6 0.780 -32.4 0.752 -36.2 0.725 -39.9 0.700 -43.6 0.675 -47.2 Gate Drain S12 MAG ANG .003 88.1 .013 80.7 .025 71.7 .035 63.2 .044 55.5 .052 48.5 .058 42.2 .063 36.6 .067 31.6 .070 27. .072 22.9 .074 19.2 .076 15.8 .077 12.6 .078 9.6 .079 6.9 .080 4.3 .080 1.8 .080 -0.5 .080 -2.8 .081 -4.9 .081 -6.9 .080 -8.9 .080 -10.9 .080 -12.7 .080 -14.5 .080 -16.3 .079 -18.0 .079 -19.7 .078 -21.3 .078 -23.0 .078 -24.5 .077 -26.1 .076 -27.6 .076 -29.1 .075 -30.6 .075 -32.0 .074 -33.5 .073 -34.9 .073 -36.2 .072 -37.6 MAG .003 .013 .025 .035 .044 .052 .058 .063 .067 .070 .073 .075 .077 .078 .079 .080 .081 .081 .082 .082 .082 .082 .083 .083 .083 .082 .082 .082 .082 .082 .081 .081 .081 .080 .080 .079 .079 .078 .078 .077 .077 S12 ANG 88.1 80.7 71.6 63.1 55.4 48.3 42.0 36.3 31.2 26.6 22.5 18.7 15.2 11.9 8.9 6.0 3.3 0.8 -1.6 -4.0 -6.2 -8.4 -10.5 -12.5 -14.5 -16.4 -18.3 -20.2 -22.0 -23.8 -25.6 -27.4 -29.1 -30.8 -32.5 -34.2 -35.8 -37.5 -39.1 -40.7 -42.3 MAG .735 .732 .721 .705 .687 .668 .649 .633 .618 .605 .594 .585 .577 .571 .566 .562 .558 .556 .554 .553 .552 .552 .553 .553 .555 .556 .558 .561 .564 .567 .570 .574 .578 .583 .588 .593 .598 .604 .610 .616 .623 S22 ANG -1.1 -5.4 -10.6 -15.4 -19.8 -23.8 -27.4 -30.7 -33.8 -36.7 -39.5 -42.2 -44.9 -47.6 -50.3 -53.0 -55.8 -58.5 -61.3 -64.1 -67.0 -69.9 -72.8 -75.8 -78.8 -81.8 -84.9 -88.0 -91.1 -94.3 -97.4 -100.6 -103.8 -107.0 -110.3 -113.5 -116.7 -120.0 -123.2 -126.4 -129.6 NOTE:* The data includes bonding wires. n=1 (0.2mm length, 25m Dia Au wire) n=1 (0.2mm length, 25m Dia Au wire) NOTE:* The data includes bonding wires. n: number of wires n=1 (0.2mm length, 25m Dia Au wire) n=1 (0.2mm length, 25m Dia Au wire) Source n=4 (0.3mm length, 25m Dia Au wire) Download S-Parameters, click here Download S-Parameters, click here 3 FLK027XP, FLK027XV GaAs FET & HEMT Chips CHIP OUTLINE FLK027XP 50 (Unit: m) 50 FLK027XV 50 (Unit: m) 50 Drain 41030 41030 Source electrodes are connected to the PHS by Via-Hole Die Thickness: 6020m 55 70 50 33030 (Via-Hole) Source Gate Source 70 Drain Source 110 Gate Source 55 70 50 33030 70 Source electrodes are electrically insulated from the bottom of the chip (PHS) Die Thickness: 6020m For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4 |
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